hi-sincerity microelectronics corp. spec. no. : he6030 issued date : 1998.07.01 revised date : 2002.08.13 page no. : 1/4 HJ112 hsmc product specification HJ112 npn epitaxial planar transistor description the HJ112 is designed for use in general purpose amplifier and low- speed switching applications. absolute maximum ratings (ta=25 c) ? maximum temperatures storage temperatur e ............................................................................................ -55 ~ +150 c junction temperature ...................................................................................... 150 c maximum ? maximum power dissipation total power dissipation (tc=25 c)..................................................................................... 20 w ? maximum voltages and currents (ta=25 c) vcbo collector to base voltage ....................................................................................... 100 v vceo collector to emitter voltage .................................................................................... 100 v vebo emitter to base voltage .............................................................................................. 5 v ic collector current .......................................................................................................... .... 4 a characteristics (ta=25 c) symbol min. typ. max. unit test conditions bvcbo 100 - - v ic=1ma bvceo 100 - - v ic=30ma icbo - - 10 ua vcb=80v iceo - - 20 ua vce=50v iebo - - 2 ma *vce(sat)1 - - 2.5 v ic=2a, ib=8ma *vbe(on) - - 2.8 v ic=2a, vce=3v *hfe1 500 - - ic=0.5a, vce=3v *hfe2 1 - 12 k ic=2a, vce=3v *hfe3 200 - - ic=4a, vce=3v cob - - 100 pf vcb=10v *pulse test : pulse width 380us, duty cycle 2% to-252
hi-sincerity microelectronics corp. spec. no. : he6030 issued date : 1998.07.01 revised date : 2002.08.13 page no. : 2/4 HJ112 hsmc product specification characteristics curve current gain & collector current 1 10 100 1000 10000 1 10 100 1000 10000 collector current i c (ma) hfe 25 o c 125 o c 75 o c hfe @ v ce =4v current gain & collector current 1 10 100 1000 10000 1 10 100 1000 10000 collector current i c (ma) hfe 25 o c 125 o c 75 o c hfe @ v ce =3v saturation voltage & collector current 100 1000 10000 100 1000 10000 collector current i c (ma) saturation voltage (mv) v ce(sat) @ i c =100i b 125 o c 75 o c 25 o c saturation voltage & collector current 100 1000 10000 100 1000 10000 collector current i c (ma) saturation voltage (mv) v ce(sat) @ i c =250i b 125 o c 75 o c 25 o c saturation voltage & collector current 100 1000 10000 100 1000 10000 collector current i c (ma) saturation voltage (mv) v be(sat) @ i c =250i b 125 o c 75 o c 25 o c on voltage & collcetor current 100 1000 10000 100 1000 10000 collector current i c (ma) on voltage (mv) v be(on) @ v ce =4v 25 o c 75 o c 125 o c
hi-sincerity microelectronics corp. spec. no. : he6030 issued date : 1998.07.01 revised date : 2002.08.13 page no. : 3/4 HJ112 hsmc product specification on voltage & collcetor current 100 1000 10000 100 1000 10000 collector current i c (ma) on voltage (mv) v be(on) @ v ce =3v 25 o c 75 o c 125 o c switching time & collector current 0.1 1 10 110 collector current (a) switching times (us ) v cc =30v, i c =250i b1 =-250i b2 tstg tf ton capacitance & reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob safe operating area 1 10 100 1000 10000 1 10 100 1000 forward voltage (v) collector current (ma ) p t =1ms p t =100ms p t =1s pd - tc 0 5 10 15 20 25 0 50 100 150 200 temperature-tc ( o c) pd(w) , power dissipation
hi-sincerity microelectronics corp. spec. no. : he6030 issued date : 1998.07.01 revised date : 2002.08.13 page no. : 4/4 HJ112 hsmc product specification to-252 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0177 0.0217 0.45 0.55 g 0.0866 0.1102 2.20 2.80 b 0.0650 0.0768 1.65 1.95 h - *0.0906 - *2.30 c 0.0354 0.0591 0.90 1.50 i - 0.0354 - 0.90 d 0.0177 0.0236 0.45 0.60 j - 0.0315 - 0.80 e 0.2520 0.2677 6.40 6.80 k 0.2047 0.2165 5.20 5.50 f 0.2125 0.2283 5.40 5.80 l 0.0551 0.0630 1.40 1.60 notes: 1.dimension and tolerance based on our spec. dated may. 05,1996. 2.controlling dimension: millimeters. 3.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.if there is any question with packing specification or packing method, please contact your local hsmc sales office. material: ? lead: 42 alloy ; solder plating ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be su itable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 ? factory 1: no. 38, kuang fu s. rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel: 886-3-5983621~5 fax: 886-3-5982931 b a c e h i j k 3 2 1 d f g l style: pin 1.base 2.collector 3.emitter 3-lead to-252 plastic surface mount package hsmc package code: j marking: date code 1 12 hj control code
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